KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package IKFW75N60ET 600V 75A 1.5V 175 C K75DET PG-TO247-3-AI
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1 TRENCHSTOP TM IGBTcopackedwithRapidfastandsoftantiparalleldiode infullyisolatedpackage Features: C TRENCHSTOP technologyoffers: VerylowVCE(sat) Shortcircuitwithstandtime5µsatTvj=75 C PositivetemperaturecoefficientinVCE(sat) LowEMI Verysoft,fastrecoveryantiparalleldiode Maximumjunctiontemperature75 C 25VRMSelectricalisolation,5/6Hz,t=min %testedisolatedmountingsurface Pbfreeleadplating;RoHScompliant CompleteproductspectrumandPSpiceModels: G E PotentialApplications: GeneralPurposeDrives(GPD) ServoDrives IndustrialUPS Welding SolarStringInverter Fully isolated package TO247 ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofjedec47/2/22 KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package 6V 75A.5V 75 C K75DET PGTO2473AI Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.
2 TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Datasheet 2 V2.
3 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 6 V DCcollectorcurrent,limitedbyTvjmax Th=25 C Th=65 C Th=65 C IC ) A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 225. A Turn off safe operating area VCE 6V,Tvj 75 C,tp=µs Diodeforwardcurrent,limitedbyTvjmax Th=25 Cvaluelimitedbybondwire Th=65 C 225. A IF Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 225. A Gateemitter voltage TransientGateemittervoltage(tp µs,d<.) Short circuit withstand time VGE=5.V,VCC 4V Allowed number of short circuits < Time between short circuits:.s Tvj=5 C PowerdissipationTh=25 C PowerdissipationTh=65 C VGE tsc Ptot ±2 ± Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, wave soldering.6mm (.63in.) from case for s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 A V µs W C M.6 Nm IsolationvoltageRMS,f=5/6Hz,t=min 2) Visol 25 V ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, 3) junction heatsink Diode thermal resistance, 3) junction heatsink Thermal resistance junction ambient Rth(jh).7.84 K/W Rth(jh).. K/W Rth(ja) 65 K/W ) Equivalent current rating in TO2473 at Th = 65 C using reference insulation material: 52µm,.3 W/mK, standard polyimide based reinforced carrier insulator 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. 3) At force on body F = 5N, Ta = 25ºC Datasheet 3 V2.
4 ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.5mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=5.V,IC=75.A Tvj=25 C Tvj=75 C VGE=V,IF=75.A Tvj=25 C Tvj=75 C Gateemitter threshold voltage VGE(th) IC=.2mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj=25 C Tvj=75 C Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=75.A 34. S V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 4726 Output capacitance Coes VCE=25V,VGE=V,f=MHz 25 Reverse transfer capacitance Cres 27 Gate charge Internal emitter inductance measured 5mm (.97 in.) from case Short circuit collector current Max. short circuits Time between short circuits:.s QG VCC=48V,IC=5.A, VGE=5V pf 44. nc LE 3. nh IC(SC) VGE=5.V,VCC 4V, tsc 5µs Tvj=5 C 69 A SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 33 ns Rise time VCC=4V,IC=75.A, tr 45 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 34 ns Fall time Lσ=75nH,Cσ=3pF tf 35 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 2.7 mj Turnoff energy Eoff diode reverse recovery mj Total switching energy Ets 5.5 mj Datasheet 4 V2.
5 DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 7 ns Diode reverse recovery charge VR=4V, Qrr.94 µc IF=75.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 23. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 687 A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=75 C Turnon delay time td(on) Tvj=75 C, 32 ns Rise time VCC=4V,IC=75.A, tr 47 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 377 ns Fall time Lσ=75nH,Cσ=3pF tf 4 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 3.96 mj Turnoff energy Eoff diode reverse recovery. 3.2 mj Total switching energy Ets 7.8 mj DiodeCharacteristic,atTvj=75 C Diode reverse recovery time trr Tvj=75 C, 7 ns Diode reverse recovery charge VR=4V, Qrr 4.93 µc IF=75.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 39. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 74 A/µs Datasheet 5 V2.
6 8 6 4 IC,COLLECTORCURRENT[A] not for linear use Ptot,POWERDISSIPATION[W] VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Forwardbiassafeoperatingarea (D=,Th=25 C,Tj 75 C,VGE=5V,tp µs) Th,HEATSINKTEMPERATURE[ C] Figure 2. Powerdissipationasafunctionofheatsink temperature (Tj 75 C) 9 8 TO247 Advanced Isolation TO247 with insulator film (using same chip) VGE=2V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] V 5V 3V V 9V 7V 5V Th,HEATSINKTEMPERATURE[ C] Figure 3. Collectorcurrentasafunctionofheatsink temperature (VGE 5V,Tj 75 C,insulatorfilm:52µm,.3W/mK) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=25 C) Datasheet 6 V2.
7 225 2 VGE=2V Tvj = 25 C Tvj = 75 C IC,COLLECTORCURRENT[A] V 5V 3V V 9V 7V 5V IC,COLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=75 C) VGE,GATEEMITTERVOLTAGE[V] Figure 6. Typicaltransfercharacteristic (VCE=2V) 3.5 VCE(sat),COLLECTOREMITTERSATURATION[V] IC = 37.5A IC = 75A IC = 5A t,switchingtimes[ns] td(off) tf td(on) tr Tj,JUNCTIONTEMPERATURE[ C] Figure 7. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=5V) IC,COLLECTORCURRENT[A] Figure 8. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,tj=75 C,VCE=4V,VGE=/5V, RG=5Ω,testcircuitinFig.E) Datasheet 7 V2.
8 td(off) tf td(on) td(off) tf td(on) tr tr t,switchingtimes[ns] t,switchingtimes[ns] RG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (ind.load,tj=75 C,VCE=4V,VGE=/5V, IC=75A,testcircuitinFig.E) Tj,JUNCTIONTEMPERATURE[ C] Figure. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,vce=4v,vge=/5v,ic=75a, rg=5ω,testcircuitinfig.e) VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] typ. min. max. E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets Tj,JUNCTIONTEMPERATURE[ C] Figure. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=.2mA) IC,COLLECTORCURRENT[A] Figure 2. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,tj=75 C,VCE=4V,VGE=/5V, RG=5Ω,testcircuitinFig.E) Datasheet 8 V2.
9 27 8 Eoff Eoff 24 Eon Ets 7 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] RG,GATERESISTOR[Ω] Figure 3. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,tj=75 C,VCE=4V,VGE=/5V, IC=75A,testcircuitinFig.E) Tj,JUNCTIONTEMPERATURE[ C] Figure 4. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,vce=4v,vge=/5v,ic=75a, RG=5Ω,testcircuitinFig.E) 9 Eoff Eon Ets 6 4 VCC=2V VCC=48V E,SWITCHINGENERGYLOSSES[mJ] VGE,GATEEMITTERVOLTAGE[V] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 5. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,tj=75 C,VGE=/5V,IC=75A, RG=5Ω,testcircuitinFig.E) QGE,GATECHARGE[nC] Figure 6. Typicalgatecharge (IC=75A) Datasheet 9 V2.
10 2 C,CAPACITANCE[pF] E+4 Cies Coes Cres IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 7. Typicalcapacitanceasafunctionof collectoremittervoltage (VGE=V,f=MHz) VGE,GATEEMITTERVOLTAGE[V] Figure 8. Typicalshortcircuitcollectorcurrentasa functionofgateemittervoltage (VCE 4V,startatTj=25 C) 4 tsc,shortcircuitwithstandtime[µs] VGE,GATEEMITTERVOLTAGE[V] Figure 9. Shortcircuitwithstandtimeasafunctionof gateemittervoltage (VCE 4V,startatTj 5 C) Zth(jh),TRANSIENTTHERMALIMPEDANCE[K/W].. D =.5. E6 E5 E4... tp,pulsewidth[s] single pulse i: ri[k/w]:.5e τi[s]:.9e5 2.5E4 2.E Figure 2. IGBTtransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Datasheet V2.
11 Zth(jh),TRANSIENTTHERMALIMPEDANCE[K/W].. D =.5. E7 E6 E5 E4... tp,pulsewidth[s] single pulse i: ri[k/w]: τi[s]: 3.2E4 2.2E Figure 2. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) trr,reverserecoverytime[ns] Tvj = 25 C, IF = 75A Tvj = 75 C, IF = 75A dif/dt,diodecurrentslope[a/µs] Figure 22. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=4V) 6 Tvj = 25 C, IF = 75A Tvj = 75 C, IF = 75A 45 4 Tvj = 25 C, IF = 75A Tvj = 75 C, IF = 75A Qrr,REVERSERECOVERYCHARGE[µC] Irr,REVERSERECOVERYCURRENT[A] dif/dt,diodecurrentslope[a/µs] Figure 23. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=4V) dif/dt,diodecurrentslope[a/µs] Figure 24. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=4V) Datasheet V2.
12 TRENCHSTOPTM Advanced Isolation 225 Tvj = 25 C, IF = 75A Tvj = 75 C, IF = 75A Tvj = 25 C Tvj = 75 C IF, FORWARD CURRENT [A] dirr/dt, DIODE PEAK RATE OF FALL OF Irr [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] Figure 25. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V) Figure 26. Typical diode forward current as a function of forward voltage 2.5 IF = 37.5A IF = 75A IF = 5A 2.25 VF, FORWARD VOLTAGE [V] Tj, JUNCTION TEMPERATURE [ C] Figure 27. Typical diode forward voltage as a function of junction temperature Datasheet 2 V 2.
13 TRENCHSTOPTM Advanced Isolation PGTO2473AI (PG HSIP247 3) DIMENSIONS A A A2 A3 b c D D E E e L L øp øp Q Note: Datasheet MILLIMETERS MAX MIN DOCUMENT NO. Z8B86434 REVISION 2 SCALE 3: mm EUROPEAN PROJECTION ISSUE DATE For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC and IEC ). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <2µm per mm and roughness of <µm. 3 V 2.
14 TRENCHSTOPTM Advanced Isolation Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t t on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 4 V 2.
15 TRENCHSTOPTM Advanced Isolation Revision History Revision:, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) 2. Final data sheet Datasheet 5 V 2.
16 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 28. All Rights Reserved. Important Notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( Please note that this product is not qualified according to the AEC Q or AEC Q documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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